M. Tsionsky et al., SCANNING ELECTROCHEMICAL MICROSCOPY .34. POTENTIAL DEPENDENCE OF THE ELECTRON-TRANSFER RATE AND FILM FORMATION AT THE LIQUID LIQUID INTERFACE/, Journal of physical chemistry, 100(45), 1996, pp. 17881-17888
The potential drop across the interface between two immiscible electro
lyte solutions (ITIES). Delta(w)(o) phi, can be quantitatively control
led and varied by changing the ratio of concentrations of the potentia
l-determining ion in the two liquid phases. This approach was used to
study the potential dependence of the rate constant for electron trans
fer (ET) at the ITIES (k(f)) by scanning electrochemical microscopy (S
ECM) with no external potential bias applied. The Tafel plot obtained
for ET between aqueous Ru(CN)(6)(4-) and the oxidized form of zinc por
phyrin in benzene was linear with a transfer coefficient, alpha = 0.5,
determined from the slope of a plot of ln k(f) vs Delta(w)(o) phi, in
agreement with conventional ET theory. The observed change in the ET
rate with the interfacial potential drop cannot be attributed to conce
ntration effects and represents the potential dependence of the appare
nt rate constant. This result is discussed in relation to the interfac
e thickness and structure. The SECM was also used to study solid phase
formation at the interface at high concentrations of supporting elect
rolyte (tetrahexylammonium perchlorate, THAClO(4)) in benzene. The pre
cipitation of the THA(+) and Ru(CN)(6)(4-) compound occurred when its
solubility product was exceeded. This process leads to the formation o
f a thin three-dimensional interfacial layer, which can be unambiguous
ly distinguished from monolayer adsorption. The approach curve analysi
s yields the composition of such a layer. Its thickness can also be pr
obed.