TEMPERATURE-DEPENDENT DISTRIBUTIONS OF ACTIVATION-ENERGIES IN AMORPHOUS-SEMICONDUCTORS

Authors
ARKHIPOV VI ADRIAENSSENS GJ YAN BJ
Citation
Vi. Arkhipov et al., TEMPERATURE-DEPENDENT DISTRIBUTIONS OF ACTIVATION-ENERGIES IN AMORPHOUS-SEMICONDUCTORS, Solid state communications, 100(7), 1996, pp. 471-475
Citations number
28
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
100
Issue
7
Year of publication
1996
Pages
471 - 475
Database
ISI
SICI code
0038-1098(1996)100:7<471:TDOAIA>2.0.ZU;2-Q
Abstract
A model is presented which explains recently reported temperature depe ndences of the density of state (DOS) distributions in amorphous mater ials. The model incorporates temporal fluctuations of the localized-st ate energies and predicts shallower DOS functions with local maxima an d sharp edges for lower temperatures. These predictions are shown to b e in good agreement with existing experimental data. Copyright (C) 199 6 Elsevier Science Ltd