SIMULATION OF ELECTRON-STATES IN QUANTUM WIRES WITH MIXED FINITE-ELEMENTS

Recent advances in the fabrication technology of heterojunction semico nductor nanostructures have made possible the realization of systems w ith extremely small sizes. In these devices, electrons are confined al ong some directions and are free to move in others. Semiconductor nano structures have become so small that we have to take into account quan tum effects. The two dimensional physical model consists of Poisson's equation for the electrostatic potential phi, coupled with an eigenval ue problem for Schrodinger's equation. Proposes a comparison between a nodal finite element method and a mixed finite element method for a s elf-consistent solution of Schrodinger-Poisson equation.