TUNNELING AND TRANSFER BETWEEN 1D AND 2D ELECTRONS IN ADJUSTED QUANTUM-WELLS WITH THIN BARRIER

By the technique of in situ focused ion-beam implantation in an underl ying doping layer followed by molecular beam epitaxy overgrowth of a d ouble quantum-well we have fabricated adjusted one-dimensional and two -dimensional electrons with very thin barrier between them. Each of th e electron systems could be contacted separately. The tunnelling resis tance between electron layers increases at high in-plane magnetic fiel ds. With magnetic fields perpendicular to the wire we can investigate the coupling of lower one-dimensional subband while in the parallel di rection higher subband states hybridise. In the first case, we observe d clear resonance in the tunnelling and electron transfer.