DESIGN AND FABRICATION OF GAAS ALGAAS SINGLE-ELECTRON TRANSISTORS BASED ON INPLANE SCHOTTKY GATE CONTROL OF 2DEG/

Authors
TOMOZAWA H JINUSHI K OKADA H HASHIZUME T HASEGAWA H
Citation
H. Tomozawa et al., DESIGN AND FABRICATION OF GAAS ALGAAS SINGLE-ELECTRON TRANSISTORS BASED ON INPLANE SCHOTTKY GATE CONTROL OF 2DEG/, Physica. B, Condensed matter, 227(1-4), 1996, pp. 112-115
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica. B, Condensed matter → ACNP
ISSN journal
09214526
Volume
227
Issue
1-4
Year of publication
1996
Pages
112 - 115
Database
ISI
SICI code
0921-4526(1996)227:1-4<112:DAFOGA>2.0.ZU;2-R
Abstract
A novel GaAs-based single electron transistor (SET) based on in-plane Schottky gate control of 2DEG is designed and fabricated to achieve SE T operations at higher temperatures than split-gate devices. Coulomb o scillation is observed up to 20 K in the novel device.