UNDOPED SPACER LAYER EFFECTS ON THE EVALUATION OF THE COHERENT LENGTHIN GAINAS INP RESONANT-TUNNELING DIODES/

In order to evaluate the hot electron coherent length from the resonan t level width of the resonant tunneling diodes (RTDs), the effects of an undoped layer (spacer) at the electrode-barrier interface is invest igated experimentally. The resonant level widths were measured for GaI nAs/InP RTDs with 2.6, 5.0 and 50.0 nM-thick spacers. Spacers of 50.0 nm in the emitter electrode give a resonant level width of 8 meV and t his corresponds to a hot electron coherent length of 190 nm at 4.2 K i n GaInAs.