THEORETICAL AND EXPERIMENTAL INVESTIGATION OF AN ELECTRON INTERFERENCE DEVICE USING MULTIATOMIC STEPS ON VICINAL GAAS-SURFACES

We propose a new, lateral surface superlattice (LSSL) type of electron interference devices, where the period of LSSL is typically 60 nm, by utilizing multiatomic steps on a vicinal GaAs (001) surface. Conducti vity of the device is theoretically studied by taking the effect of ra ndomness in the LSSL into account. We also investigate its drain and t ransconductance characteristics experimentally at low temperatures, an d found clear oscillations in g(m) - V-G characteristics, which were a scribed to the electron interference effect.