AFM-BASED FABRICATION OF SI NANOSTRUCTURES

We report the fabrication of nanometer-scale Si structures by using an atomic force microscope to write surface-oxide patterns by the local anodic oxidation of a H-passivated Si (100) surface. These oxide patte rns were used as masks for selective etching of the silicon. Side-gate d Si field effect transistors with critical features as small as 30 nm have been fabricated by this method.