QUANTUM TRANSPORT CALCULATIONS FOR SILICON INVERSION-LAYERS IN MOS STRUCTURES

We evaluate the mobility of inversion layer electrons in silicon MOSFE Ts using a real-time Green's functions formalism. Simulation results s uggest that interface-roughness considerably affects the low-held mobi lity, even at room temperature. We also find that an exponential model for the surface-roughness autocorrelation function, as well as Ando's model for the surface-roughness matrix element, leads to the best des cription of this scattering process over a wide range of inversion cha rge densities and temperatures. Universal mobility behavior is observe d when the proper weighting coefficient for the depletion charge densi ty is used in the definition of the effective field.