HIGH-FIELD TRANSPORT-PROPERTIES OF INAS ALGASB QUANTUM WIRES/

We demonstrate the successful fabrication of multiple quantum wire str uctures using InAs/AlGaSb heterostructures and report on their transpo rt properties. We have performed magnetotransport measurements on the various width of the wires ranging between 0.2 and 0.4 mu m One-dimens ional transport properties confirmed by magnetic depopulation were obs erved up to 0.4-mu m-wide wires, and the sublevel spacing was as large as 5.9 meV for 0.2-mu m-wide wires. This demonstrates the advantageou s feature of InAs/AlGaSb heterostructures for realizing quantum device s operating at higher temperatures. High field transport properties al so reveal their advantageous features.