SI-H BONDING CONFIGURATION IN SIOX-N,H FILMS DEPOSITED BY CHEMICAL-VAPOR-DEPOSITION

Authors
BORGHESI A SASSELLA A PIVAC B ZANOTTI L
Citation
A. Borghesi et al., SI-H BONDING CONFIGURATION IN SIOX-N,H FILMS DEPOSITED BY CHEMICAL-VAPOR-DEPOSITION, Solid state communications, 100(9), 1996, pp. 657-661
Citations number
9
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
100
Issue
9
Year of publication
1996
Pages
657 - 661
Database
ISI
SICI code
0038-1098(1996)100:9<657:SBCISF>2.0.ZU;2-T
Abstract
A detailed study performed by means of infrared spectroscopy on Si-H s tretching in silicon-rich silicon oxide films deposited by chemical va por deposition is presented. The experimental spectra of as-deposited and annealed samples are interpreted on the basis of a generalization of the random bonding model. The results indicate that two kinds of Si -H bonds exist, one much more stable than the other, whose properties depend on their nearest neighboring atoms. Copyright (C) 1996 Elsevier Science Ltd