ELECTROCHROMISM OF W-OXIDE-BASED THIN-FILMS - RECENT ADVANCES

Citation
A. Azens et al., ELECTROCHROMISM OF W-OXIDE-BASED THIN-FILMS - RECENT ADVANCES, Solid state ionics, 86-8, 1996, pp. 943-948
Citations number
21
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical
Journal title
ISSN journal
01672738
Volume
86-8
Year of publication
1996
Part
2
Pages
943 - 948
Database
ISI
SICI code
0167-2738(1996)86-8:<943:EOWT-R>2.0.ZU;2-U
Abstract
We summarize some recent work related to electrochromic tungsten-oxide -based thin films. The electronic structure of crystalline cubic (pero vskite) WO3 and HWO3 was calculated from first principles. It was foun d, that hydroxide formation was energetically favoured. Experimental s tudies were made on heavily disordered films prepared by reactive magn etron sputtering in Ar + O-2 with and without CF4 addition and substra te bias. Structural studies, indicated that the electron bombardment a ssociated with a positive substrate bias led to grain growth and parti al crystallization while maintaining a high density of W=O double bond s presumably on grain boundaries. Tandem films, with a thin protective layer of electron bombarded oxide covering a thicker oxyfluoride laye r, were able to combine rapid dynamics of the electrochromism with goo d electrochemical durability. Oblique angle sputtering in Ar + O-2 led to films whose microstructure comprised inclined columns. Pronounced angular selective transmittance was found to coexist with electrochrom ism.