LOW-THRESHOLD INGAP INGAASP LASERS WITH T HE EMISSION WAVELENGTH 1.02MU-M/

Authors
DURAEV VP NEDELIN ET MELNIKOV AV SUMAROKOV MA SHISHKIN VA
Citation
Vp. Duraev et al., LOW-THRESHOLD INGAP INGAASP LASERS WITH T HE EMISSION WAVELENGTH 1.02MU-M/, Kvantovaa elektronika, 23(9), 1996, pp. 785-786
Citations number
6
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Kvantovaa elektronika → ACNP
ISSN journal
03687147
Volume
23
Issue
9
Year of publication
1996
Pages
785 - 786
Database
ISI
SICI code
0368-7147(1996)23:9<785:LIILWT>2.0.ZU;2-8
Abstract
Injection lasers based on InGaP/InGaAsP quantum-well, structures, emit ting at 1.02 mu m, were made. A weak temperature dependence of the thr eshold current (with the characteristic temperature T-0 = 180 K) of th ese lasers made it possible to dispense with the cooling units and out put power control systems during operation. This increased the reliabi lity and reduced the cost of the lasers.