H. Elghitani et al., 2-DIMENSIONAL ANALYTICAL MODELING OF SHORT-CHANNEL MOS-TRANSISTORS, International journal of electronics, 81(5), 1996, pp. 517-524
An analytical model for the current-voltage characteristics of short-c
hannel MOS transistors is presented. The model is a two-dimensional mo
del based on the solution of a Poisson equation in the depletion regio
n under the gate. The degradation of inversion carriers' mobility due
to the strong lateral electric field is taken into account. An attract
ive feature of this model is that it provides an analytical expression
for the I-V characteristics of the MOSFET as a function of material a
nd device parameters. In addition, it is valid for both short- and lon
g-channel transistors. The numerical I-V characteristics obtained usin
g the proposed model are in close agreement with experimental data. It
is concluded that the proposed model is an accurate and efficient mod
el. Consequently, it can be used in circuit simulation programs.