2-DIMENSIONAL ANALYTICAL MODELING OF SHORT-CHANNEL MOS-TRANSISTORS

An analytical model for the current-voltage characteristics of short-c hannel MOS transistors is presented. The model is a two-dimensional mo del based on the solution of a Poisson equation in the depletion regio n under the gate. The degradation of inversion carriers' mobility due to the strong lateral electric field is taken into account. An attract ive feature of this model is that it provides an analytical expression for the I-V characteristics of the MOSFET as a function of material a nd device parameters. In addition, it is valid for both short- and lon g-channel transistors. The numerical I-V characteristics obtained usin g the proposed model are in close agreement with experimental data. It is concluded that the proposed model is an accurate and efficient mod el. Consequently, it can be used in circuit simulation programs.