U. Biggeri et al., COMPARISON OF RADIATION-DAMAGE IN SILICON DETECTORS INDUCED BY PIONS,PROTONS AND NEUTRONS, Nuovo cimento della Società Italiana di Fisica. A. Nuclei, particles and fields, 109(9), 1996, pp. 1351-1358
High-resistivity silicon detectors have been irradiated, respectively,
with neutrons, protons and pions; fluences between 1 . 10(12) and 4 .
10(13) particles/cm(2) were attained. Measurements of I-V, C-V charac
teristics and Thermally Stimulated Current (TSC) analyses were perform
ed before and after irradiation in order to monitor electrical and lat
tice damage induced by irradiation with different particles. Electrica
l degradation parameters have been determined; energy levels and conce
ntrations of main radiation-induced defects have been attained by TSC
analysis. Results show that different particles irradiation introduce
mainly the same energy levels of induced traps in the bulk. An increas
e in concentration of the same kind of point defects with fluence has
been also observed for the different irradiation particles.