HIGH-PRESSURE STUDIES OF CVT GROWN CUINS2 SINGLE-CRYSTALS

Single crystals of CuInS2 having H-and p-type character were grown by chemical vapour transport technique and were characterised by XRD and temperature variation of resistivity. The bandgap E(g) was determined from the optical absorption studies. The thermoelectric power (S) and a.c. resistivity (R(omega)) of both the n and p-type crystals were mea sured upto 8 GPa. From a.c. conductivity measurements, we deduce that the conduction in CuInS, is dominated by the hopping mechanism.