ATOMIC-STRUCTURE OF MONATOMIC S-B STEPS ON CLEAN SI(001) AND NI-CONTAMINATED SI(001)

Authors
KOO JY YI JY HWANG C KIM DH LEE S CHO J
Citation
Jy. Koo et al., ATOMIC-STRUCTURE OF MONATOMIC S-B STEPS ON CLEAN SI(001) AND NI-CONTAMINATED SI(001), Physical review. B, Condensed matter, 54(15), 1996, pp. 10308-10311
Citations number
33
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
54
Issue
15
Year of publication
1996
Pages
10308 - 10311
Database
ISI
SICI code
0163-1829(1996)54:15<10308:AOMSSO>2.0.ZU;2-Q
Abstract
The atomic structure at monatomic-height S-B steps on clean Si(001) an d a Ni-contaminated Si(001) was investigated using high-resolution sca nning tunneling microscopy at room temperature. Rebonded S-B steps are dominant on clean Si(001). Nonrebonded S-B steps with split-off dimer s are favored on the Ni-contaminated Si(001) and in the vicinity of di mer vacancies on clean Si(001). The nonrebonded step with the split-of f dimer is generated by the strain due to dimer vacancies. A buckled d imer was observed in the vicinity of a kink of S-B step edges an clean Si(001).