CALCULATION OF ELASTIC-CONSTANTS IN DEFECTED AND AMORPHOUS-SILICON BYQUANTUM SIMULATIONS

We present a quantum-mechanical calculation of finite-temperature elas tic constants in silicon based on tight-binding molecular dynamics. We investigate amorphous silicon as obtained from the melt, and the evol ution of elastic constants in silicon during ion implantation. The eff ect of post-implantation thermal annealing is also presented and discu ssed.