THE STATE-OF-THE-ART AND FUTURE-TRENDS IN DRAMS

Citation
Cg. Hwang et al., THE STATE-OF-THE-ART AND FUTURE-TRENDS IN DRAMS, Microelectronics, 27(8), 1996, pp. 777-783
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
ISSN journal
00262692
Volume
27
Issue
8
Year of publication
1996
Pages
777 - 783
Database
ISI
SICI code
0026-2692(1996)27:8<777:TSAFID>2.0.ZU;2-1
Abstract
The production of future generation DRAM devices critically requires R &D of process technologies for highly integrable and cost effective pr ocesses. Also, in order to support the ever-increasing requirements fo r high performance operation, the future DRAM products should be equip ped with the capabilities of low voltage operation and high speed. Thi s paper presents an overview of process technology for deep sub-microm eter devices such as 256 Mbit DRAM based upon current research data an d giga bit DRAMs. Copyright (C) 1996 Elsevier Science Ltd.