The production of future generation DRAM devices critically requires R
&D of process technologies for highly integrable and cost effective pr
ocesses. Also, in order to support the ever-increasing requirements fo
r high performance operation, the future DRAM products should be equip
ped with the capabilities of low voltage operation and high speed. Thi
s paper presents an overview of process technology for deep sub-microm
eter devices such as 256 Mbit DRAM based upon current research data an
d giga bit DRAMs. Copyright (C) 1996 Elsevier Science Ltd.