POINT-DEFECTS AND TEXTURE OF PD1-XINX SPUTTERED INTERMETALLIC THIN-FILMS

Citation
Wt. Wu et al., POINT-DEFECTS AND TEXTURE OF PD1-XINX SPUTTERED INTERMETALLIC THIN-FILMS, Intermetallics, 4(8), 1996, pp. 617-623
Citations number
28
Categorie Soggetti
Metallurgy & Metallurigical Engineering","Chemistry Physical","Material Science
Journal title
ISSN journal
09669795
Volume
4
Issue
8
Year of publication
1996
Pages
617 - 623
Database
ISI
SICI code
0966-9795(1996)4:8<617:PATOPS>2.0.ZU;2-C
Abstract
Pd1-xInx thin films (0.4 < x < 0.56) were prepared by radio frequency sputtering from a multi-zone target. The properties of these Hume-Roth ery alloys were studied by X-ray diffractometry, electron probe microa nalysis and scanning tunneling microscopy. The diffraction spectra wer e analyzed to obtain the intensity ratio of the (100) superlattice lin e to the (200) normal line, together with the variations of the lattic e constant. The results ape explained quantitatively by a model based on point defects, i.e. Pd vacancies in In-rich films and Pd antisite a toms in Pd-rich films. In-rich films grow preferentially in the [100] direction while Pd-rich films grow preferentially in the [110] directi on. The grains in indium-rich sputtered films appear to be enclosed in an atomically thick, indium-rich layer. The role of texture and the i nfluence of point defects on electrical resistivity is also reported. (C) 1996 Elsevier Science Limited.