S. Yamaguchi et al., BANDWIDTH DEPENDENCE OF INSULATOR-METAL TRANSITIONS IN PEROVSKITE COBALT OXIDES, Physical review. B, Condensed matter, 54(16), 1996, pp. 11022-11025
Insulator-metal transitions and related electronic structures have bee
n investigated for single crystals of perovskite-type cobalt oxides RC
oO(3) (R=La, Pr, Nd, Sm, Eu, and Gd) with R-dependent variation of one
-electron bandwidth (W). All the compounds exhibit the insulating grou
nd state but undergo gradual insulator-metal (I-M) transitions at 500-
700 K. Systematic variation of the I-M transition temperatures (T-IM)
as well as the thermal and optical charge gaps in the insulating phase
have been observed with change of R species (or equivalently W). Anom
alously low T-IM as compared with the charge gap in each RCoO(3) sugge
sts that the I-Ari transition should be viewed as a thermally induced
Mott transition.