TITANIUM-HYDROGEN DEFECTS IN SILICON

Authors
JOST W WEBER J
Citation
W. Jost et J. Weber, TITANIUM-HYDROGEN DEFECTS IN SILICON, Physical review. B, Condensed matter, 54(16), 1996, pp. 11038-11041
Citations number
15
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
54
Issue
16
Year of publication
1996
Pages
11038 - 11041
Database
ISI
SICI code
0163-1829(1996)54:16<11038:TDIS>2.0.ZU;2-N
Abstract
Several titanium-hydrogen (TiH) complexes are generated in crystalline Si by wet chemical etching or a remote hydrogen plasma treatment. We identify two electrically active (E(C)-0.31 eV, E(C)-0.57 eV) and one electrically inactive TiH complex. The passive TiH complex dissociates at temperatures above 570 K, leading to an increase in the interstiti al Ti concentration.