L. Seehofer et al., STRUCTURE AND PROPERTIES OF CLEAN AND IN-COVERED GE(103) SURFACES, Physical review. B, Condensed matter, 54(16), 1996, pp. 11062-11065
Clean and In-covered Ge(103) surfaces have been studied using scanning
tunneling microscopy, electron diffraction, and photoemission. At roo
m temperature the clean surface displays a well ordered (4x1) reconstr
uction, which on heating to similar to 430 degrees C undergoes a rever
sible (4x1)<->(1x1) phase transition. Atomically resolved scanning tun
neling microscopy images indicate that the (4x1) reconstruction involv
es two atomic layers. After depositing 2 ML of indium and annealing at
150 degrees C the (4x1) reconstruction is removed and a (1x1) structu
re forms which can be described as an In terminated ideal (103) surfac
e with In atoms saturating all of the Ge surface dangling bonds.