THERMALLY-INDUCED INTERFACE DEGRADATION IN (111)SI SIO2 TRACED BY ELECTRON-SPIN-RESONANCE/

Thermal post-oxidation interface degradation in (111) Si/SiO2 has been isolated by electron-spin resonance (ESR) as a permanent P-b (Si=Si-3 ) interface defect creation. This process, initiating from similar to 640 degrees C onward, reveals interface breakdown on an atomic scale a s interfacial SiO bond rupture. The crucial creation step has been iso lated as thermal cycling in an O-free ambient. Once created, the new P b system exhibits similar fully reversible H passivation-depassivation kinetics as the preexisting one, naturally introduced during oxidatio n. ESR is herewith raised to a powerful probe for Si/SiO2 degradation.