An improvement in the distribution of junction properties for YBaCuO/P
rBaCuO/YBaCuO trilayer junctions has been demonstrated. In order to en
sure a uniform substrate temperature during the deposition of trilayer
films, Al/Cu/Al stacked foils are introduced as a backing plate betwe
en the substrate and sample holder. Furthermore, the film composition
is optimized to reduce the precipitated particles on the surface of th
e films. All the junctions with a barrier thickness of 35 nn and an ar
ea less than 100 mu m(2) show RSJ-like current voltage characteristics
with some excess current at 4.2 K. The 1-sigma spreads of Josephson c
ritical current density J(c) and normalized junction resistance R(n)A
are obtained to be 34% and 25%, respectively, for 88 junctions on the
same substrate. This result is comparable to the 1-sigma spreads of ra
mp-edge type junctions.