CONFIRMATION OF ALGAAS CRYSTAL DOMAIN INVERSION USING ASYMMETRIC WET ETCHING AND OPTICAL 2ND-HARMONIC GENERATION METHODS

The occurrence of crystal domain inversion on a (001) GaAs substrate w as confirmed by a direct observation method based on asymmetric wet et ching of AlGaAs and an optical method based on second-harmonic generat ion. Direct evidence of crystalline inversion was exhibited in samples with a periodic structure prepared by wafer bonding, selective remova l of the bonded GaAs, and metal-organic vapor phase epitaxial regrowth on the patterned template.