100-K OPERATION OF AL-BASED SINGLE-ELECTRON TRANSISTORS

Authors
NAKAMURA Y CHEN CD TSAI JS
Citation
Y. Nakamura et al., 100-K OPERATION OF AL-BASED SINGLE-ELECTRON TRANSISTORS, JPN J A P 2, 35(11A), 1996, pp. 1465-1467
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
35
Issue
11A
Year of publication
1996
Pages
1465 - 1467
Database
ISI
SICI code
Abstract
We have made Al-based single-electron transistors with an artificially fabricated 20-nm island electrode by utilizing standard electron-beam lithography and three-angle shadow evaporation. A periodic gate-volta ge dependence of current at above 100 K is demonstrated with this devi ce. In addition, we increased the charging energy about 20% by using a nodization.