INFRARED RADIATION FROM HOT HOLES DURING SPATIAL TRANSPORT IN SELECTIVELY DOPED INGAAS GAAS HETEROSTRUCTURES WITH QUANTUM-WELLS/

Authors
ALESHKIN VY ANDRONOV AA ANTONOV AV BEKIN NA GAVRILENKO VI REVIN DG ZVONKOV BN LINKOVA ER MALKINA IG USKOVA EA
Citation
Vy. Aleshkin et al., INFRARED RADIATION FROM HOT HOLES DURING SPATIAL TRANSPORT IN SELECTIVELY DOPED INGAAS GAAS HETEROSTRUCTURES WITH QUANTUM-WELLS/, JETP letters, 64(7), 1996, pp. 520-524
Citations number
10
Categorie Soggetti
Physics
Journal title
JETP letters → ACNP
ISSN journal
00213640
Volume
64
Issue
7
Year of publication
1996
Pages
520 - 524
Database
ISI
SICI code
0021-3640(1996)64:7<520:IRFHHD>2.0.ZU;2-D
Abstract
The infrared radiation from hot holes in InxGa1-xAs/GaAs heterostructu res with strained quantum wells during lateral transport is investigat ed experimentally. It is found that the infrared radiation intensities are nonmonotonic functions of the electric field. This behavior is du e to the escape of hot holes from quantum wells in the GaAs barrier la yers. A new mechanism for producing a population inversion in these st ructures is proposed. (C) 1996 American Institute of Physics.