WIGNER CRYSTALLIZATION OF ELECTRONS AND HOLES IN AMORPHOUS-SILICON NITRIDE - ANTIFERROMAGNETIC ORDERING OF LOCALIZED-ELECTRONS AND HOLES ASA RESULT OF A RESONANCE EXCHANGE INTERACTION

Authors
GRITSENKO VA MILOV AD
Citation
Va. Gritsenko et Ad. Milov, WIGNER CRYSTALLIZATION OF ELECTRONS AND HOLES IN AMORPHOUS-SILICON NITRIDE - ANTIFERROMAGNETIC ORDERING OF LOCALIZED-ELECTRONS AND HOLES ASA RESULT OF A RESONANCE EXCHANGE INTERACTION, JETP letters, 64(7), 1996, pp. 531-537
Citations number
15
Categorie Soggetti
Physics
Journal title
JETP letters → ACNP
ISSN journal
00213640
Volume
64
Issue
7
Year of publication
1996
Pages
531 - 537
Database
ISI
SICI code
0021-3640(1996)64:7<531:WCOEAH>2.0.ZU;2-Z
Abstract
The predicted quantitative relation between the density and trapping c ross section of traps in Si3N4 and the Coulomb repulsion radius in the Wigner crystallization of carriers in localized states is observed ex perimentally. The absence of ESR for localized electrons and holes in Si3N4 is interpreted on the basis of a model of a resonance exchange i nteraction of electrons on account of tunneling via localized states. (C) 1996 American Institute of Physics.