AC ANALYSIS OF AMORPHOUS-SILICON DEVICES

Authors
PELLEGRINI A COLALONGO L VALDINOCI M RUDAN M
Citation
A. Pellegrini et al., AC ANALYSIS OF AMORPHOUS-SILICON DEVICES, IEEE transactions on computer-aided design of integrated circuits and systems, 15(11), 1996, pp. 1324-1331
Citations number
9
Categorie Soggetti
Computer Application, Chemistry & Engineering","Computer Science Hardware & Architecture
Journal title
IEEE transactions on computer-aided design of integrated circuits and systems → ACNP
ISSN journal
02780070
Volume
15
Issue
11
Year of publication
1996
Pages
1324 - 1331
Database
ISI
SICI code
0278-0070(1996)15:11<1324:AAOAD>2.0.ZU;2-Y
Abstract
The transport model in semiconductors is examined in the case where th e effect of distributed gap states is significant like, e.g., in thin- film transistors, A solution scheme is derived for the two additional continuity equations accounting for the trapped charge such that, with out loss of generality, the efficiency of the traditional method imple mented in the existing device-analysis codes is kept. The dynamic effe ct of the trapped charge is then examined in the ac operation of a rea listic thin-film device. including the analysis of the interelectrode capacitances.