DYNAMIC PROPERTIES OF A 1.3 MU-M LIGHT-EMISSION-AND-DETECTION (LEAD) DIODE WITH A HIGH MESA SEMIINSULATING BH FOR SUBSCRIBER TCM TRANSMISSION

This paper describes the dynamic properties of a 1.3 mu m light-emissi on-and-detection (LEAD)) diode that has a high mesa semi-insulating bu ried heterostructure (SI-BH) to reduce the capacitance of the chip (0. 6-0.8 pF) are described, A modulation bandwidth of 12 GHz in laser dio de (LD) operation and a detection bandwidth of shout 2 GHz in photodet ector (PD) operation are achieved using a chip and a module, respectiv ely, In hit error rate (BER) performance at 30 Mb/s, a receiver sensit ivity (BER = 10(-8)) of -40.2 dBm is confirmed, and a switching charac teristics of under 1 mu s from LD to PD operation is estimated by a ci rcuit simulation.