REACTION-MECHANISMS OF MONO-MOLECULAR LAYER GROWTH USING CHEMICAL ADSORPTION

The surface reaction mechanism of GaAs monolayer after monolayer growt h using chemical adsorption of Ga(CH3)(3) (trimethylgallium (TMG)) and arsine (AsH3) was investigated. The monolayer growth on GaAs(100) was investigated as a function of injection duration, injection pressure, evacuation duration of TMG and AsH, and photo-irradiation in an ultra -high vacuum system. It was found that the growth rate per cycle was s trongly influenced by the surface stoichiometry of arsenic during the growth. Furthermore, in-situ analysis of the monolayer growth by using mass spectroscopy and the measurement of surface reflectivity during monolayer growth was performed. As the result, a model for the surface reaction and the adsorbed species of mono-molecular layer growth was obtained.