Al thin films were deposited via photochemical vapor deposition on cat
alytic layers of Ti, TiO2, and Pd, using dimethylaluminum hydride, Dep
osition was carried out al low gas pressures to induce a surface react
ion based on adsorption and subsequent decomposition of adsorbates. Of
these three layers Ti was so effective as a catalyst that the Al film
s were thermally deposited even at a low substrate temperature of 60 d
egrees C with a growth rate of 0.5 nm/min. The UV light generated by a
deuterium lamp helped increase the growth rates. On the other hand, A
l could be deposited oil TiO2 layers only under irradiation at a subst
rate temperature of 120 degrees C. It took several minutes to cover th
e TiO2 surface with Al and initiate the Al film's growth. An entirely
opposite result was observed for Al deposition on Pd layers. Here, the
UV light inhibited the Al growth on the surface, whereas the films we
re deposited thermally. X-ray photoelectron spectroscopy showed the fo
rmation of a photolytic production of the adsorbate, which acts presum
ably as a center that inhibits further Al growth.