SION LARGE-AREA DEPOSITION WITH A DEEP-UV FLASH ARGON KRYPTON LAMP/

Silicon oxynitride, SiOxNy (x, y similar to 1), grown by flash deep-ul traviolet chemical vapor deposition (FUV CVD) has attractive optical, electrical, mechanical and chemical properties which make it a suitabl e dielectric with low dielectric constant for both microelectronics an d photonics applications. At low temperatures (300-400 degrees C) larg e area nearby-stoichiometric films are deposited. At different precurs or flow ratios, SiOxNy films are obtained with variable x and y. This allows variation of optical functions with x and y. FUV CVD films are low in hydrogen and free of water and hydroxyl. Since the deposition t emperature is significantly lower Man that observed in other conventio nal techniques, they are essentially free of stress.