IN-SITU RESISTANCE MEASUREMENTS DURING PULSED-LASER DEPOSITION OF ULTRATHIN FILMS

In-situ resistance measurement is a powerful technique for monitoring the growth and properties of thin films. In this paper, we showed that it can be applied to study the initial growth mechanisms of indium ti n oxide on glass. An interesting transition from a 3D growth mode at l ow temperature to 2D growth at higher temperature was observed. The tr ansition from the Volmer-Weber mechanism to the Stranski-Krastanov mec hanism occurs at 200 degrees C. The density of nucleation sites for th e deposition of ITO on glass is also shown to increase as a function o f substrate temperature. This result is consistent with thermally acti vated nucleation on the glass substrate.