DEPOSITION OF C-N FILMS BY REACTIVE LASER-ABLATION

Authors
DANNA E LUCHES A PERRONE A ACQUAVIVA S ALEXANDRESCU R MIHAILESCU IN ZEMEK J MAJNI G
Citation
E. Danna et al., DEPOSITION OF C-N FILMS BY REACTIVE LASER-ABLATION, Applied surface science, 106, 1996, pp. 126-131
Citations number
17
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
106
Year of publication
1996
Pages
126 - 131
Database
ISI
SICI code
0169-4332(1996)106:<126:DOCFBR>2.0.ZU;2-B
Abstract
A study of the characteristics of films deposited at room temperature on Si and KBr substrates by XeCl laser ablation of graphite in low pre ssure (0.25-2.5 mbar) N-2 and NH3 is presented. Hard films, with a ver y high electrical resistivity were obtained. N/C atomic ratios up to 0 .6 were calculated from backscattering measurements. Different diagnos tic techniques (XPS, IR absorption spectroscopy, etc.) prove the forma tion of carbon nitride with a prevalent graphitic structure.