RAMAN-SPECTROSCOPY OF SI1-X-YGEXCY LAYERS OBTAINED BY PULSED-LASER INDUCED EPITAXY

In this paper we present an investigation of pulsed laser induced epit axy (PLIE) to obtain epilayers of Si1-xGexCy, on top of Si substrate b y annealing non-crystalline SiGeC layers. Si1-x-yGexCy/Si heterostruct ures were formed from C+ implanted pseudomorphic Si0.84Ge0.16 films an d from hydrogenated amorphous SiGeC films deposited on Si(100). All sa mples were annealed in vacuum by XeCl excimer laser pulses, An analysi s of the annealing process is presented, based on a detailed Raman stu dy of the laser treated samples, The interpretation is corroborated by additional techniques: Rutherford backscattering spectroscopy, X-ray diffraction, and secondary ion mass spectroscopy (SIMS). Raman scatter ing is shown to be a relatively simple, non-destructive technique, to analyze the growth process, i.e. parameters such as crystallization, S iGeC layer depth, Ge content, and C incorporation in substitutional si tes.