CRYSTALLIZATION OF SILICON-CARBIDE THIN-FILMS BY PULSED-LASER IRRADIATION

Pulsed laser irradiation at low incident fluences was demonstrated to be effective for the crystallization of amorphous hydrogenated silicon carbide (a-SiC:H) films deposited on Si wafers, The amorphous films, with a carbon content in the range 30-50%, were deposited on (100) Si wafers by low temperature plasma enhanced chemical vapor deposition (P ECVD). The crystallization treatment was carried out by a multipulse K rF excimer laser, The crystallinity modifications induced by the laser treatment were evidenced by Fourier transform infrared (FTIR) spectro scopy and X-ray diffraction. An important increase of the microhardnes s was evidenced as an effect of the laser treatment.