The bandgap of InGaAs-InGaAsP multiple-quantum well (MQW) material can
be accurately tuned by photo-absorption induced disordering (PAID), u
sing a Nd:YAG laser, to allow lasers, modulators and passive waveguide
s to be fabricated from a standard MQW structure. The process relies o
n optical absorption in the active region of the MQW to produce suffic
ient heat to cause interdiffusion between the wells and barriers. Blue
shifts of up to 160 nm in the lasing spectra of both broad area and r
idge waveguide lasers are reported, Bandgap tuned electro-absorption m
odulators were fabricated and modulation depths as high as 27 dB were
obtained. Single mode waveguide losses are as low as 5 dB cm(-1) at 15
50 nm. Selective area disordering has been used in the fabrication of
extended cavity lasers. The retention of good electrical and optical p
roperties in intermixed material demonstrates that PAID is a promising
technique for the integration of devices to produce photonic integrat
ed circuits. A quantum well intermixing technique using a pulsed laser
is also reported.