THE EFFECTS OF CARRIER TRANSPORT ON THE PHOTOLUMINESCENCE OF DEGENERATE ELECTRON-HOLE PLASMA IN GAAS EPILAYERS

Time resolved photoluminescence (TRPL) is employed to study photogener ated electron-hole plasma expansion under strong illumination conditio ns in thin GaAs epilayer. We have observed spectral dependencies simil ar to ones which are usually observed on carrier's cooling, However, i n our case they are caused by the diffusion of the degenerate electron -hole plasma perpendicular to the crystal surface. We have studied the influence of the degenerated carrier transport on the luminescence ch aracteristics of bulk samples, both experimentally and by simulations. We suggest using this method to measure the transport coefficients of both degenerate and hot excess carriers in semiconductor structures.