FABRICATION AND CHARACTERIZATION FOR SINGLE-CRYSTAL SUBSTRATES OF YBA2CU3O7-DELTA AND RELATED MATERIALS

We have characterized oxide superconductor single crystal substrates f or thin film processing, called 'homoepitaxial growth', which were fab ricated from single crystals of YBa2Cu3O7-delta and 123-structure rela ted materials such as YBa2(Cu1-xZnx)(3)O-7-delta and Pr1-xBa2-xCu3O7-d elta grown by the pulling method. Those substrates have good crystalli nity with a X(min) value of approximately 2%, evaluated by Rutherford backscattering spectrometry and good surface morphology with unit-cell steps observed by atomic force microscopy. Therefore, those substrate s are necessary for completing fine processing, 123-structure pseudo-h omoepitaxial growth, for device applications.