THIN-FILM GROWTH OF SRBITIO SYSTEM BY PLD METHOD AND OPTICAL CHARACTERIZATION

Authors
TACHIKI M YAMAMURO K KOBAYASHI T
Citation
M. Tachiki et al., THIN-FILM GROWTH OF SRBITIO SYSTEM BY PLD METHOD AND OPTICAL CHARACTERIZATION, Materials science & engineering. B, Solid-state materials for advanced technology, 41(1), 1996, pp. 131-133
Citations number
10
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
41
Issue
1
Year of publication
1996
Pages
131 - 133
Database
ISI
SICI code
0921-5107(1996)41:1<131:TGOSSB>2.0.ZU;2-H
Abstract
SrBi4Ti4O15, Sr2Bi4Ti5O18 and Sr3Bi4Ti6O21 thin films were grown on (1 00)MgO and (100)Pt/(100)MgO substrates by the pulsed laser deposition (PLD) method. X-ray diffraction (XRD) revealed c-axis-oriented crystal growth of each SiBiTiO film. Reflection high-energy electron diffract ion (RHEED) from the films grown on MgO showed streak patterns which i ndicates the epitaxial ordering of fabricated thin films. Fundamental optical absorption of SrBi4Ti4O15, Sr2Bi4Ti5O18 and Sr3Bi4Ti6O21 films started at 3.4, 3.5 and 3.7 eV, respectively. Moreover, the Fourier t ransform infrared (FTIR) spectra also revealed a systematic change in their longitudinal optical (LO) phonon absorption dip structure.