FORMATION OF HIGH-DIELECTRIC OXIDE-FILMS ON SRVO3-XSI SUBSTRATES

In order to form electrodes in capacitor structures, metallic SrVO3-x (SVO) films have been epitaxially grown on Si(100) substrates using a conventional electron-beam method. The resistivities of crystalline SV O films are from 340 to 900 mu Omega cm, and their temperature depende nces indicate metallic behaviors. Then, such high-epsilon oxides as (B a-x,Sr-1-x)TiO3 (BST) and Pb(Zr,Ti)O-3 (PZT) films have been prepared by the sol-gel method on epitaxial-SVO/Si substrates. It is demonstrat ed that BST films can grow epitaxially on these substrates, while a PZ T film shows no crystallinity. From the measurement by the secondary i on mass spectroscopy, it has been found that lead (Pb) and vanadium (V ) elements mutually diffuse at the interface between a PZT and an SVO film. The electrical properties for Al/BST/SVO/Si capacitor structures have been investigated using I-V and C-V measurements. The best value s of the breakdown field at a current density of 10(-8) A cm(-2) is 37 0 kV cm(-1) and the effective dielectric constant is found to be as hi gh as 410.