A PROPOSAL OF EPITAXIAL OXIDE THIN-FILM STRUCTURES FOR FUTURE OXIDE ELECTRONICS

New epitaxial oxide thin film structures are proposed for future oxide electronics, particularly for ferroelectric random access memory (FeR AM) with oxide electrodes drawing on silicon-on-insulator (SOI) and hi gh-T-c superconductor technology. These structures have a benefical ef fect in device scaling and ferroelectric size effect and can be a star ting point for future oxide electronics, such as high-T-c superconduct ing, ferroelectric, piezoelectric and optical devices. In addition, se veral candidates for electrodes are discussed, considering the recent research on conductive perovskite, including high-T-c superconductors. The basic thin film structure is epitaxially grown Ferroelectric/ABO( 3)/CeO2 or MgAl2O4/Si. As ideal structures, we propose four kinds of t hin film structures based on a-axis oriented Bi layer-structured ferro electric thin film and ferroelectric artificial superlattice and an id ea for a superconductor-normal metal-superconductor (SNS) device with conductive perovskite superlattice. Besides FeRAM, these oxide multila yers fabricated on Si can be also applied to high-T-c superconducting devices, optoelectronic devices, infrared (IR) pyre-sensors and surfac e acoustic wave (SAW) devices.