PT SRBI4TI4O15/SI-MOS SYSTEM - PRELIMINARY-STUDY EMPLOYING AN INVERTED MOS CONFIGURATION/

Authors
YAMAMURO K TACHIKI M KOBAYASHI T
Citation
K. Yamamuro et al., PT SRBI4TI4O15/SI-MOS SYSTEM - PRELIMINARY-STUDY EMPLOYING AN INVERTED MOS CONFIGURATION/, Materials science & engineering. B, Solid-state materials for advanced technology, 41(1), 1996, pp. 174-177
Citations number
5
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
41
Issue
1
Year of publication
1996
Pages
174 - 177
Database
ISI
SICI code
0921-5107(1996)41:1<174:PSS-PE>2.0.ZU;2-A
Abstract
Highly polarizable c-axis-oriented SrBi4Ti4O15 (SBTO) films with permi ttivity of 53 epsilon(0) were grown on (100)Pt/(100)MgO substrates by eclipse pulsed laser deposition (PLD) method. By mechanically contacti ng a p(-)-Si tip onto the SBTO surface and using a Pt underlying layer as the base electrode, the inverted metal-oxide semiconductor (MOS) s tructures were prepared. Although the experiment is still in the preli minary stage, the held-induced carrier density at the Si surface reach ed as high as about5.0x10(12) cm(-2) for 5 V applied voltage, being ab out 10 times higher than that of the metal/SiO2/Si MOS diode.