The microscopic structure of the Sb stabilized GaAs(100)-(2 x 4) surfa
ces is investigated combining reflectance anisotropy spectroscopy with
first-principles total energy minimization and tight-binding calculat
ions of optical properties. We show that the model accepted so far, co
ntaining three Sb dimers in the outermost layer, is not a stable surfa
ce geometry. Our results reveal a coexistence of Sb and Ga dimers on t
he Sb-stabilized (2 x 4) surface.