ELECTROOPTIC BEAM SCANNER IN KTIOPO4

We have fabricated and demonstrated both wafer and waveguide electro-o ptic beam scanners in KTiOPO4 using alternating domain-inverted triang ular patterns in the substrate. This devise is an extension of previou s work in LiTaO3. The domain inversion was achieved by pulsed electric field poling. The deflection sensitivity was 2.1 mrad/kV, compared to the calculated value of 2.3 mrad/kV for this geometry. The bandwidth of the devices uas measured to be at least 200 kHz. which was limited by the high voltage driver. (C) 1996 American Institute of Physics.