EVIDENCE FOR ELECTRON TRAPPING BY SM DIMER AND TRIMER CENTERS IN SM DOPED CAF2

Citation
W. Beck et al., EVIDENCE FOR ELECTRON TRAPPING BY SM DIMER AND TRIMER CENTERS IN SM DOPED CAF2, Applied physics letters, 69(21), 1996, pp. 3197-3199
Citations number
21
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
69
Issue
21
Year of publication
1996
Pages
3197 - 3199
Database
ISI
SICI code
0003-6951(1996)69:21<3197:EFETBS>2.0.ZU;2-W
Abstract
Using coherent anti-Stokes Raman and linear absorption spectroscopy we present experimental evidence for a novel electron trapping mechanism in Sm doped CaF2. The appearance of additional Raman lines after ioni zation of the Sm2+ ions, their dependence on the Sm3+ concentration an d their behavior due to an enhancement by the lowest 4f-->5d transitio n of Sm2+, support strongly that electrons can be trapped by dimers or trimers of Sm3+ ions in a CaF2 lattice. The resulting color change is reversible due to a possible reionization of the traps, rendering thi s material photochromic. (C) 1996 American Institute of Physics.