MOLECULAR-BEAM EPITAXY OF HIGH-QUALITY ZNSE HOMO-EPITAXIAL LAYERS ON SOLID-PHASE RECRYSTALLIZED SUBSTRATES

We study through reflection high-energy electron diffraction (RHEED) a nd low-temperature photoluminescence (PL) spectroscopy the molecular-b eam epitaxy of ZnSe homoepitaxial layers on solid-phase recrystallized substrates. We show that with a proper ex situ substrate polishing a two-dimensional (2D) RHEED pattern is readily observed when introducin g the substrate into the growth chamber at low temperature. We demonst rate that the in situ pre-growth treatment has a dramatic influence on ZnSe nucleation and that a suitable preparation leads to direct 2D gr owth of ZnSe layers which exhibit superior optical properties. The PL spectra are dominated by the near-band edge emission, with no deep-lev el and defect-related Lines. (C) 1996 American Institute of Physics.