E. Tournie et al., MOLECULAR-BEAM EPITAXY OF HIGH-QUALITY ZNSE HOMO-EPITAXIAL LAYERS ON SOLID-PHASE RECRYSTALLIZED SUBSTRATES, Applied physics letters, 69(21), 1996, pp. 3221-3223
We study through reflection high-energy electron diffraction (RHEED) a
nd low-temperature photoluminescence (PL) spectroscopy the molecular-b
eam epitaxy of ZnSe homoepitaxial layers on solid-phase recrystallized
substrates. We show that with a proper ex situ substrate polishing a
two-dimensional (2D) RHEED pattern is readily observed when introducin
g the substrate into the growth chamber at low temperature. We demonst
rate that the in situ pre-growth treatment has a dramatic influence on
ZnSe nucleation and that a suitable preparation leads to direct 2D gr
owth of ZnSe layers which exhibit superior optical properties. The PL
spectra are dominated by the near-band edge emission, with no deep-lev
el and defect-related Lines. (C) 1996 American Institute of Physics.