SITE-SPECIFIC REACTION-KINETICS FOR GALLIUM-ARSENIDE METALORGANIC VAPOR-PHASE EPITAXY

We have developed a kinetic model for arsine decomposition on GaAs(001 ) that accounts for the effect of the surface reconstructions on the r ates of As-4 and As-2 desorption. The main assumption of the model is that As-2 desorbs more slowly from Ga sites than from As sites. The mo del accurately simulates the temperature-programmed desorption of arse nic from GaAs(001). In addition, it reveals how the As coverage and th e As-2 and As-4 production rates depend on the conditions employed dur ing GaAs metalorganic vapor-phase epitaxy. (C) 1996 American Institute of Physics.